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IRFB16N60L, SIHFB16N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 100 30 46 Single
D
FEATURES
600 0.385
* Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications * Lower Gate Charge Results in Simpler Drive Requirements
Available
RoHS*
COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free Available
TO-220
APPLICATIONS
G
* Zero Voltage Switching SMPS * Telecom and Server Power Supplies
S N-Channel MOSFET
S G D
* Uninterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFB16N60LPbF SIHFB16N60L-E3 IRFB16N60L SIHFB16N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 600 30 16 10 60 2.5 310 16 31 310 10 - 55 to + 150 300d 10 1.1 UNIT V
A W/C mJ A mJ W V/ns C lbf * in N*m
TC = 25 C
for 10 s 6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 2.5 mH, RG = 25 , IAS =16 A, dV/dt = 10 V/ns (see fig. 12a). c. ISD 16 A, dI/dt 340 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91097 S-Pending-Rev. A, 03-Jun-08 www.vishay.com 1
WORK-IN-PROGRESS
IRFB16N60L, SIHFB16N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 62 0.4 UNIT C/W
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Current Forward Turn-On Time IS ISM VSD trr MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 9.0 Ab VDS = 50 V, ID = 9.0 A
600 3.0 8.3
0.39 0.385 -
5.0 100 50 2.0 0.460 -
V V/C V nA A mA S
Ciss Coss Crss Coss eff. Coss eff. (ER) Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
2720 26 20 120 100 20 44 28 5.5
100 30 46 ns nC pF
VGS = 0 V
VDS = 0 V to 480 Vc
-
ID = 16 A, VDS = 480 V, see fig. 7 and 15b VGS = 10 V VDD = 300 V, ID = 16 A, RG = 1.8 , see fig. 11a and 11bb
-
-
130 240 450 1080 5.8
16 A 60 1.5 200 360 670 1620 8.7 V ns
G
S
TJ = 25 C, IS = 16 A, VGS = 0
Vb
TJ = 25 C, IF = 16 A, TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IS = 16 A, TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C
Qrr IRRM ton
nC A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss whil VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91097 S-Pending-Rev. A, 03-Jun-08
IRFB16N60L, SIHFB16N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V
1000
ID, Drain-to-Source Current ()
ID, Drain-to-Source Current (A)
100
100
10
BOTTOM
10
T J = 150C
1
0.1
5.0V
1
T J = 25C
0.1
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 0.01 4 6 8
VDS = 50V 20s PULSE WIDTH
10 12 14 16
VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics
100
TOP
3.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V
ID = 15A
2.5
VGS = 10V
2.0
(Normalized)
5.0V
1
1.5
1.0
0.1
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics
T J , Junction Temperature (C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91097 S-Pending-Rev. A, 03-Jun-08
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IRFB16N60L, SIHFB16N60L
Vishay Siliconix
100000
VGS , Gate-to-Source Voltage (V)
10000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
12.0 ID= 15A 10.0 VDS= 480V VDS= 300V VDS= 120V 8.0
C, Capacitance(pF)
Ciss
1000
Coss
100
6.0
Crss
10
4.0
2.0
1 1 10 100 1000
0.0 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
100.00
ISD, Reverse Drain Current (A)
20
10.00
T J = 150C
Energy (J)
15
10
1.00
T J = 25C
5
0 0 100 200 300 400 500 600 700
VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
Fig. 8 - Maximum Safe Operating Area
VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91097 S-Pending-Rev. A, 03-Jun-08
IRFB16N60L, SIHFB16N60L
Vishay Siliconix
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
18 16 14
ID, Drain Current (A)
10000
ID, Drain-to-Source Current (A)
100
12 10 8 6 4 2
10 100sec
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100
1msec
10msec
0
1000
25
50
75
100
125
150
VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area
T C , Case Temperature (C)
Fig. 10 - Maximum Darin Current vs. Case Temperature
VDS VGS RG
RD
VDS 90 %
D.U.T. + - VDD
10 V
Pulse width 1 s Duty factor 0.1 %
10 % VGS td(on) tr td(off) tf
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05
P DM
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty factor D = 2. Peak T t1/ t 2
t1 t2
J = P DM x Z thJC
+T C
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91097 S-Pending-Rev. A, 03-Jun-08
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IRFB16N60L, SIHFB16N60L
Vishay Siliconix
5.0
15 V
VGS(th) Gate threshold Voltage (V)
4.5
VDS
L
Driver
4.0
RG 20 V
D.U.T. IAS
+ A - VDD
3.5
ID = 250A
3.0
tp
0.01
Fig. 14b - Unclamped Inductive Test Circuit
2.5
VDS tp
2.0 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( C )
Fig. 13 - Threshold Voltage vs. Temperature
IAS Fig. 14c - Unclamped Inductive Waveforms
VGS
QG
600
EAS , Single Pulse Avalanche Energy (mJ)
500
ID TOP 7.2A 10A BOTTOM 16A
QGS
QGD
VG
400
Charge Fig. 15a - Basic Gate Charge Waveform
300
Current regulator Same type as D.U.T.
50 k
200
100
12 V
0.2 F 0.3 F
+
0 25 50 75 100 125 150
VGS
3 mA
D.U.T.
-
VDS
Starting T J , Junction Temperature (C)
IG ID Current sampling resistors
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Fig. 15b - Gate Charge Test Circuit
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Document Number: 91097 S-Pending-Rev. A, 03-Jun-08
IRFB16N60L, SIHFB16N60L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91097.
Document Number: 91097 S-Pending-Rev. A, 03-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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